VITAL HVT 25VF behavioral model
The VITAL HVT 25VF behavioral model completely simulates the functionality of real component behavior at all component timing behavior. This implies complete functionality, timing on inputs and outputs, all desired relations between input signals (setup/hold , pulse with, etc.) and all delays between inputs and outputs.
An important part of the board-level and/or system level verification is ensuring that the timing requirements between all the signals in design are met. In case any timing constraints are not satisfied, the VITAL HVT 25VF behavioral model detects timing violation and reports it by using standard VITAL functions.
VITAL HVT M25PX behavioral model
The VITAL HVT M25PX behavioral simulation model is a 16 Mbit (2 Mb x 8) serial flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus, with clock speeds per line at up to 75MHz.Apart from the standard serial flash memory instructions, the VITAL HVT M25PX supports two new, high-performance dual input/output instructions:
•Dual Output Fast Read (DOFR) instruction used to read data at up to 75 MHz by using both pin
•DQ1 and pin DQ0 as outputs
Dual Input Fast Program (DIFP) instruction used to program data at up to 75 MHz by using both pin DQ1 and pin DQ0 as inputs
Behavioral Model MX25L8006E, 8 Mbit CMOS Serial Flash Memory
The MX25L8006E is a flash memory with standard serial interface, which supports standard 1xI/O and dual 2xI/O read, erase and program operations with power supply in 2.7V – 3.6V range. This device is Serial Peripheral Interface compatible with Mode 0 and Mode 3. Memory is organized in 16 equal 64KB blocks, or 256 equal 4KB sectors, in order to enable individual block/sector erase.
The VITAL HVT MX25L behavioral model completely follows the operation capabilities of a real component. This implies complete functionality, delays between input signals and output signals and all timing requirements regarding input signals (setup and hold timings, pulse widths, etc.). Considering how important timing requirements are, this VITAL HVT MX25L behavioral model will detect and report a timing violation if constraints are not satisfied.
SH1636 SERDES Gigabit Ethernet Transceivers, VITAL Model
The VITAL SH1636 behavioral model is fully compliant to the SH1636 Gigabit Ethernet transceiver. The SH1636 is a single chip, Gigabit Ethernet transceiver. It performs all the functions of the Physical Medium Attachment (PMA) portion of the Physical layer, as specified by the IEEE 802.3z Gigabit Ethernet standard. These functions include parallel-to-serial and serial-to-parallel conversion, clock generation, clock data recovery, and word synchronization. In addition, an internal loopback function is provided for system debugging. The SH1636 is ideal for Gigabit Ethernet, serial backplane and proprietary point-to-point applications. The device supports both 1000BASE-LX and 1000BASE-SX fiber-optic media, and 1000BASECX copper media.
ATMEL AT25DF161- SPI Serial Flash Memory VITAL Model
The VITAL AT25DF161 behavioral model is fully compliant to the 3687B-DFLASH-11/08 Specification of ATMEL, AT25DF161, 16-Megabit, SPI Serial Flash Memory. The AT25DF161 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF161, with its erase granularity as small as 4-Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices.
FM22L16 4Mbit F-RAM Memory VITAL Model
The VITAL FM22L16 behavioral model is fully compliant to RAMTRON FM22L16, 4Mbit F-RAM Memory, Rev, 1.2/Dec.2007 Specification. The FM22L16 is a 256Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory.